DELTA台達211 T2T3T4
This course aims to offer a comprehensive understanding of compound semiconductor power and RF device technologies. It covers essential theories and techniques crucial to these fields, including device physics, epitaxy, stability, reliability, circuit topologies, modeling, packaging, and system considerations. In the laboratory sessions, students will be guided by teaching assistants to fabricate gallium nitride transistors and conduct device characterization experiments.
Course keywords: Gallium Nitride, Power Device, RF Device, High electron mobility transistor, Stability and Reliability, Packaging and System ● 課程說明(Course Description) An introduction of the compound semiconductor power and RF device technology includes device, epitaxy, process, package, circuit topology, stability & reliability, modeling and integration circuits. Course objective: To enable students to establish an overview understanding on various technical aspects of compound semiconductor power and RF device technology. Course Outcomes: 1. Upon of completion of this course, the participants should be able to: 2. Understanding the evolution of compound semiconductor power and RF device technology development. 3. Understanding the advantages and challenges of compound semiconductor power and RF device technology. 4. Understanding the technical breakthroughs and future directions of device, epitaxial, process and packaging design. 5. Understanding the basic stability and reliability of compound semiconductor power and RF device technology. 6. Understanding future development directions in ICs and applications. ● 指定用書(Text Books) Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, “Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion”, 2018, Springer. ● 參考書籍(References) B. Baliga, “Fundamentals of Power Semiconductor Devices”, 2008, Springer. 教學方式(Teaching Method) Lectures offered in English 教學進度(Syllabus) 1. Introduction to Wide bandgap Semiconductor Power Devices 2. Introduction to GaN-on-Si Power HEMTs (Device Physics) 3. GaN-on-Si Epitaxy Technology for GaN Power HEMTs 4. CMOS-compatible Process for GaN Power HEMT Fabrication 5. GaN Power Device Stability and Reliability 6. Circuit Topologies for GaN Power HEMT Applications 7. Packaging of GaN Power HEMTs 8. Modeling of GaN power HEMTs 9. Monolithic Integration and Co-package Solutions 10. Introduction of Compound semiconductor RF Devices Final Project -GaN HEMT Device Fabrication -GaN HEMT Characterization -Board-level Characterization -Presentation ● 成績考核(Evaluation) Course Quiz: 70% Final project: 30% ● 採用下列何項 AI 使用規則 (Indicate which of the following options you use to manage student use of the AI) 禁止使用,請註明相關的監管機制 Prohibited use; please specify relevant oversight # 備註:選課學生需具有修畢元件物理或等同課程相關背景,而因為要去TSRI做實驗,亦需要有 TSRI門禁權限。 Note: Students who choose the course must have a background in component physics or equivalent courses, and because they want to do experiments at TSRI, they also need to have TSRI access rights.
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選課學生需具有修畢元件物理或等同課程相關背景,而因為要去TSRI做實驗,亦需要有TSRI門禁權限。
半導體學院,電子所優先,第3次選課起開放全校修習
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